XMax plans to acquire Hexa Creation, the developer of 1200V vertical gallium nitride (GaN) power semiconductor technology, in a transaction the company links to power infrastructure for AI data centers.
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XMax announced on October 9, 2026, that it intends to acquire Hexa Creation, a developer of 1200V vertical GaN power semiconductor technology, according to a company statement distributed via GlobalNewswire. The stated purpose of the transaction is to give XMax a position in high-voltage GaN power technology aimed at AI data center power infrastructure. The announcement identifies Hexa Creation's device technology, rather than a finished commercial product line, as the central asset being acquired. The release excerpt provided does not include the purchase price, payment structure or other financial terms. As described, the deal is a technology and capability acquisition rather than a capacity or customer-list purchase.
Gallium nitride is a wide-bandgap semiconductor that has been widely adopted in lateral device designs, most visibly in compact chargers and power adapters where high switching frequency and low losses matter at relatively low voltages. A vertical architecture instead conducts current through the thickness of the wafer, a design route intended to support higher voltage and higher current simultaneously. The 1200V class is a standard voltage tier used in industrial motor drives, electric vehicle power systems and front-end power conversion equipment. Today that tier is served mainly by silicon IGBTs and silicon carbide MOSFETs, while vertical GaN remains at an earlier stage of maturity. Substrate quality, epitaxial growth and long-term reliability qualification are the commonly cited engineering hurdles for bringing vertical GaN devices to volume production.
AI training and inference clusters raise the amount of electrical power concentrated in a single rack, and that power must be converted from grid-level alternating current through several stages down to the low voltages used by processors. Each conversion stage dissipates some energy as heat, which in turn adds to cooling load and constrains how densely compute can be packed. Higher-voltage, more efficient conversion at the front end of the power chain is therefore one route to reducing losses before power reaches the chip. The source statement ties the acquisition specifically to this AI data center power infrastructure segment, framing the technology as an input to that buildout. That framing describes a demand mechanism; it does not by itself establish when or whether such devices reach commercial deployment.
XMax announced that it plans to acquire Hexa Creation, a company that develops 1200V vertical gallium nitride power semiconductor technology. The stated rationale is to establish a position in high-voltage GaN devices aimed at AI data center power infrastructure. The announcement summary provided does not disclose financial terms such as the purchase price.
GaN is a wide-bandgap semiconductor that is already used in lateral device designs, commonly in compact power adapters. In a vertical design, current flows through the thickness of the semiconductor wafer instead of laterally across its surface, an approach intended to handle higher voltages and currents. Vertical GaN is considered less mature than lateral GaN or silicon carbide in high-voltage applications.
1200V is a voltage class used in industrial motor drives, electric vehicle power systems and front-end power conversion equipment, so devices rated at that level can address a large set of power electronics applications. That tier is currently served mainly by silicon IGBTs and silicon carbide MOSFETs. A 1200V vertical GaN device would be an alternative option in that class if it can be manufactured reliably at scale.
Deal Overview
What 1200V Vertical GaN Means Technically
Why AI Data Centers Are the Target Market
Strategic Logic and Execution Considerations
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Bringing Hexa Creation's technology in-house would give XMax direct ownership of high-voltage GaN intellectual property and engineering expertise, rather than depending on licensing or external supply relationships. The move stands out against the wider industry pattern, in which silicon carbide has been the dominant wide-bandgap choice for 1200V-class power applications, making vertical GaN a less crowded but also less proven path. For XMax, the value of the transaction depends on integrating a development-stage technology into a product roadmap and moving it through customer qualification cycles. Semiconductor acquisitions of this type typically require closing conditions to be satisfied and are followed by a multi-year period of process development, reliability testing and manufacturing scale-up before commercial volumes are meaningful. Based on public news sources.
AI compute clusters concentrate a large amount of electrical load in a small physical space, and power has to be converted from grid AC through multiple stages down to the low voltages used by processors. Every conversion step loses some energy as heat, which increases cooling requirements and limits how densely equipment can be packed. More efficient high-voltage conversion at the front of the power chain is one way to reduce those losses, which is the demand mechanism XMax cites.
Acquisitions of this kind are usually subject to closing conditions, which can include regulatory review, before the transaction is completed. After closing, the acquiring company would need to integrate the target's engineering team and IP into its own development and manufacturing plans. Because vertical GaN at high voltages is still an emerging technology, customer qualification and process development generally take multiple years.
